Experienced Technology & Integration Engineer (m/f/d) for SRAM Device Development
GlobalFoundries
Dresden, Saxony,Germany
vor 6 Tg.

Shaping the future with innovation and smart technologies .... our growth offers development opportunities for your career We are Europe’s largest semiconductor manufacturing location, combining smart solutions with leading edge technologies in our Dresden Foundry -

for our customers, for groundbreaking products and for a sustainable future. In addition to our existing manufacturing of 28nm semiconductor products, our new 22nm technology (22FDX) sets standards with regard to energy efficiency and performance.

With our energy saving technology, we are targeting the growth markets of the future : the 'Internet of Things', including areas such as Industry 4.

0, Wearables and Automotive. Experienced Technology & Integration Engineer (m / f / d) for SRAM Device Development Your job : We are looking for an experienced SRAM Device Engineer (f / m) memory cell knowhow to support our activities in the Process & Control Device department in Fab1 Dresden / Germany.

You will be a member of a highly-skilled team working on logic, SRAM, MV / HV and BCD device development of novel and optimization of existing active and passive devices.

The task of the team is to define, develop and implement device improvements as well as maintain established active and passive devices in leading-

edge CMOS technologies in agreement with customers’ needs.

Your specific responsibilities will be to :

  • SRAM bit-cells for the different technology extension per customized customer requirements.
  • Deliver a competitive SRAM with optimal yields and meeting electrical and reliability specifications.
  • Close collaboration with customer facing platform teams to meet expectations on regular updates and communication
  • Clear understanding of SRAM bitcell design and familiar with layout optimization techniques
  • Analyze SRAM electrical and yield data to perform SRAM device targeting
  • Understanding of SRAM electrical test structures and test conditions.
  • Interface with device and integration teams on cross functional issues affecting SRAM related performance, yield, or reliability impacting products
  • Understanding SRAM bit-cells relevant layout structures both planner and vertical (SP, DP, TP cells)
  • Design layout and experiments dedicated to the continuous SRAM development for leading-edge CMOS technologies
  • Your profile :

  • Bachelor / Master Degree in Physics / Electrical / Electronic Engineering or related field
  • You have at least 4 years of professional experience in the semiconductor industry and would like to make the next step in your career.
  • You have specific knowledge of device physics, SRAM bitcell design, and SRAM design technology co-optimization for SRAM arrays.
  • Your extensive knowledge of SRAM physics and fabrication allows you to make smart decisions to actively contribute to technology improvements in agreement with customers’ needs.
  • Preferably, you also have some experience PCRB, MRB, FMEA, project management and compact modeling of semiconductor devices.
  • We are looking for a team player with strong communication skills who is able to efficiently exchange ideas and share results within and between teams with different technical background.
  • We expect competence in both, written and spoken English as well as solid knowledge in use of standard office software (Excel / PowerPoint).
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