Physicist (gn*) for Gallium Nitride on Silicon material development
vor 5 Tg.

Your tasks

  • Characterization of III-N Epiwafers (structural & electrical characterization)
  • Development and data analysis of GaN metrology
  • Support MOCVD Process development of GaN / Si layer structures
  • Collaboration with customers and research partners
  • your PROFILe

  • Master or PhD in physics, material science or electrical engineering
  • Background in compound semiconductor technologies
  • Knowledge in advanced material characterization (e.g. defect analysis, surface properties, using XRD, AFM, PL)
  • Experimental skills in epitaxy, most suitable experience in GaN / Si MOCVD deposition
  • Commitment to the project s success and willingness to collaborate in an innovative R&D Team
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